Company:Qualcomm Technologies, Inc. Job Area:Engineering Group, Engineering Group > ASICS Engineering Job Overview: Qualcomm is a company of inventors that unlocked 5G ushering in an age of rapid acceleration in connectivity and new possibilities that will transform industries, create jobs, and enrich lives. But this is just the beginning. It takes inventive minds with diverse skills, backgrounds, and cultures to transform 5Gs potential into world-changing technologies and products. This is the Invention Age - and this is where you come in. + Job Description: This position is required as a lead engineer to develop advanced passive integration/technology through the external foundries/OSATs. The job responsibility is as followings: + Lead and set process-flows to optimize KPIs for RF/RFFE modules. + Develop the accurate PCM design to monitor the process-readiness through product-shuttles. + Lead to ramp up HVMs at suppliers driven by schedule, volume, capacity, and risk-mitigation. + Run the process qualifications by process KPIs, wafer-level reliability, and CPKs. + Assess between product specifications and foundries' process-capability. + Lead the process extraction to generate the electrical parameters for design-flow (PDK). + Lead to enable second source for assurance of the HVM capacity. + Validate the performance target through test-chips for product-assessments. + Set the plans for the process-qualification to gauge the process-readiness. + Closely work with package team for FBEOL development for the product requirements. + Set the process roadmap to evolve advance technologies to be aligned in the market-trend. + Lead to optimize the process-integration driven by higher performance, lower cost, and smaller form-factor. + Skills/Experience: A successful candidate will have following skills and experiences: + Experience to develop the customized BEOL/FBEOL processes for RF products and devices. + Development of technologies for high-Q and High-density inductor. + Skillset to improve the process stability (CP/CPK) for RF devices (inductor and capacitor). + Skillset to optimize the process-flow to monitor/control process key-parameters. + Dielectric material characterization (dielectric constant, reliability, power-handling, BDV, ESD) for RF applications. + Experience to control the process-variation/analysis from the development to HVM. + Ability to run device-level-reliability by JEDEC specifications. + Knowledge of RF technologies, IPD, SOI IPD, LTCC, RF circuitry, RF PKG, and RF system + Material interface engineering including binary/tertiary phase-diagram and chemical reaction-activation process. + 2D and 3D EM simulation for electrical and magnetic characterization. + Experiment and characterization of RF devices, RF circuitry, and RF modeling. + 3D RF integration through SIP and CPI (Chip and Package interaction). + Dielectric material (glass, polymer ILD, MIM dielectric) characterization for RF application. + Material interface adhesion characteristics modeling and characterization methodology development. + Development of organic (substrate) and inorganic panel manufacturing process-flow. + Education and Requirements: Preferred Doctorate (+10 years: relevant experience), Electrical Engineering or Equivalent Experience + Keywords: BEOL/FBEOL, IPD, High-density capacitor, High-Q inductor, MIM capacitor, 3D Inductor, RF technology, RFFE module, TSV, Silicon interposer Applicants: If you are an individual with a disability and need an accommodation during the application/hiring process, please call Qualcomm's toll-free number found here for assistance. 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